| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-037-4712 (010374712) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Nimikkeistokeskus Ncb Finland, Scientific Atlanta Inc, Raytheon Company, Military Specifications, Joint Army-Navy Specifications, Eldec Corporation, Micro Uspd Inc, Rockwell Collins Aerospace, Lockheed Martin Corporation, Northrop Grumman Systems Corporation, Mbda Incorporated |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 231048-706 | bae systems inc | semiconductor device diode | 81413 | RFQ |
| 10133162 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 163964 | scientific atlanta inc | semiconductor device diode | 10110 | RFQ |
| 808136-2 | raytheon company | semiconductor device diode | 96214 | RFQ |
| JANTX1N6075 | military specifications | semiconductor device diode | 81349 | RFQ |
| 3323-1229-1 | raytheon company | semiconductor device diode | 3b150 | RFQ |
| JANTX1N5806 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| CR122-04 | eldec corporation | semiconductor device diode | 08748 | RFQ |
| 1N5806JTX | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| JAN1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
| 353-9019-410 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 7906930-10 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| UTR511 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| 20-00779-004 | raytheon company | semiconductor device diode | 00724 | RFQ |
| JANTX1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
| 944467-8060 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| JANTX1N5806US | military specifications | semiconductor device diode | 81349 | RFQ |
| B72159 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | CERAMIC OR GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-01-037-4712, 5961010374712 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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