You have arrived on the Request for Quote (RFQ) page for part number 8001201JA, a Dla Land And Maritime component that is listed with the product description “Microcircuit Set” and NSN 5962-01-363-0915 for fast identification. By using the form supplied below, you can offer details regarding your requirements to secure customized procurement solutions for your consideration. As our goal is to provide quick service, you can expect a response within 15 minutes of our staff members reviewing your submission. Alternatively, if you use the email or phone number at the bottom of the webpage, you can directly connect with our experts to discuss your needs.
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Alongside Dla Land And Maritime part number 8001201JA, you can seamlessly search for more items from this manufacturer or CAGECode 67268 using our curated catalogs. Similarly, we also offer means for locating other products that belong to FSC 5962 Microcircuits Electronic, which this component falls under having the NSN 5962-01-363-0915. Whether you desire part number 8001201JA or other NSN components, you can rest assured that our entire inventory is sourced from reputable manufacturers and suppliers. Bearing this in mind, kick off procurement today to see why so many customers select Aero Defence Solutions as their trusted purchasing hub.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8769001RA | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
| CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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